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Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

✍ Scribed by Chen, W.; Sun, Q.-Q.; Xu, M.; Ding, S.-J.; Zhang, D.W.; Wang, L.-K.

Book ID
127274039
Publisher
American Chemical Society
Year
2007
Tongue
English
Weight
229 KB
Volume
111
Category
Article
ISSN
1932-7447

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## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow