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Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor

✍ Scribed by Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos

Book ID
125510977
Publisher
AVS (American Vacuum Society)
Year
2004
Tongue
English
Weight
548 KB
Volume
22
Category
Article
ISSN
0734-2101

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## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow