𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

✍ Scribed by D. W. McNeill; S. Bhattacharya; H. Wadsworth; F. H. Ruddell; S. J. N. Mitchell; B. M. Armstrong; H. S. Gamble


Publisher
Springer US
Year
2007
Tongue
English
Weight
361 KB
Volume
19
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Growth of the Initial Atomic Layers of T
✍ Steffen Strehle; Daniela Schmidt; Matthias Albert; Johann W. Bartha πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 651 KB

## Abstract The growth of ultra‐thin Ta‐N films using atomic layer deposition (ALD) is investigated by in‐situ X‐ray photoelectron spectroscopy (XPS) starting from the first precursor pulse, as precursor substances __tert__‐butylimido‐tris(diethylamido)tantalum (TBTDET) and __tert__‐butylimido‐bis(