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Optical and electrical characterization of hafnium oxide deposited by MOCVD

✍ Scribed by Y. Lu; O. Buiu; S. Hall; P. K. Hurley

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
228 KB
Volume
45
Category
Article
ISSN
0026-2714

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✦ Synopsis

The paper reports on electrical and optical investigations performed on HfO 2 high-k films deposited by Metalorganic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO 2 and the silicon substrate, which can be optically modelled as a mixture of Si and SiO 2 ; this information is further used in the assessment of the electrical measurements. Hysteresis effects have been observed in the Capacitance-Voltage (C-V) measurements for the as-deposited sample as well as the annealed samples. For the samples with large hysteresis, Poole-Frenkel (PF) conduction is the most likely dominant conduction mechanism. The energy of dominant trap level was found to be $0.7 eV.

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Deposition of Antimony and Antimony Oxid
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✍ C.P. Myers; P.W. Haycock; M. Pichot; G.A. Horley; K.C. Molloy; S.A. Rushworth; L πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 899 KB

## Abstract Thin films of antimony and antimony oxides have been deposited by metal–organic (MO) CVD from a variety of metal–organic precursors at temperatures in the range 150–650 °C under both atmospheric and reduced pressure. Below 400 °C, uniform films of pure senarmontite (Sb~2~O~3~) with a mi