✦ LIBER ✦

On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs

✍ Scribed by Masson, P.; Autran, J.-L.; Brini, J.

Book ID: 121361210
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 62 KB
Volume: 20
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.740662

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of hole-tunneling current

Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

✍ Hongyu Yu; Yong-Tian Hou; Ming-Fu Li; Dim-Lee Kwong 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 302 KB

Noise model of gate-leakage current in u

Noise model of gate-leakage current in ultrathin oxide MOSFETs

✍ Lee, J.; Bosman, G.; Green, K.R.; Ladwig, D. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 725 KB

Model and analysis of gate leakage curre

Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

✍ Jonghwan Lee; Bosman, G.; Green, K.R.; Ladwig, D. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 406 KB

Characterization and modeling of edge di

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

✍ Yang, K.N.; Huang, H.T.; Chen, M.J.; Lin, Y.M.; Yu, M.C.; Jang, S.M.; Yu, D.C.H. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 184 KB

Estimation of the effects of remote char

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides

✍ Nian Yang; Henson, W.K.; Hauser, J.R.; Wortman, J.J. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 190 KB

Influence of defects on elastic gate tun

Influence of defects on elastic gate tunneling currents through ultrathin SiO2gate oxides: predictions from microscopic models

✍ M Städele; B Fischer; B.R Tuttle; K Hess 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 179 KB

We study theoretically the influence of neutral oxygen vacancies on the magnitude of elastic tunneling currents through the ultrathin (1.3 nm) gate oxide of a prototypical metaloxide field-effect transistor with a channel length of 50 nm. For the calculation of the gate currents, we have used transm