Influence of defects on elastic gate tunneling currents through ultrathin SiO2gate oxides: predictions from microscopic models
✍ Scribed by M Städele; B Fischer; B.R Tuttle; K Hess
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 179 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We study theoretically the influence of neutral oxygen vacancies on the magnitude of elastic tunneling currents through the ultrathin (1.3 nm) gate oxide of a prototypical metaloxide field-effect transistor with a channel length of 50 nm. For the calculation of the gate currents, we have used transmission coefficients obtained from three-dimensional semiempirical tight-binding calculations for a model Si-SiO 2 -Si junction, and electron distribution functions based on full-band Monte-Carlo transport simulations. The positions of the atoms in the junction were determined by first-principles density-functional calculations. It is found that the gate currents increase significantly (by typically one to three orders of magnitude) in the presence of vacancies having a density around 10 12 cm -2 , provided that the resonant energy levels lie less than 1 eV above the Si conduction band edge.