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Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides

✍ Scribed by Nian Yang; Henson, W.K.; Hauser, J.R.; Wortman, J.J.


Book ID
114538045
Publisher
IEEE
Year
2000
Tongue
English
Weight
190 KB
Volume
47
Category
Article
ISSN
0018-9383

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