𝔖 Bobbio Scriptorium
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An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

✍ Scribed by Rodriguez, N; Roldán, J B; Gámiz, F


Book ID
120553750
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
142 KB
Volume
22
Category
Article
ISSN
0268-1242

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