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On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma

✍ Scribed by Mansu Kim; Nam-Ki Min; Sun Jin Yun; Hyun Woo Lee; Alexander Efremov; Kwang-Ho Kwon

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
205 KB
Volume
85
Category
Article
ISSN
0167-9317

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The etching mechanism of (Bi 4Γ€x La x )Ti 3 O 12 (BLT) thin films in Ar/Cl 2 inductively coupled plasma (ICP) and plasmainduced damages at the etched surfaces were investigated as a function of gas-mixing ratios. The maximum etch rate of BLT thin films was 50.8 nm/min of 80% Ar/20% Cl 2 . From vario