Etch damage evaluation on (Bi4−xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources
✍ Scribed by Jong-Gyu Kim; Gwan-Ha Kim; Kyoung-Tae Kim; Chang-Il Kim
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 632 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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✦ Synopsis
The etching mechanism of (Bi 4Àx La x )Ti 3 O 12 (BLT) thin films in Ar/Cl 2 inductively coupled plasma (ICP) and plasmainduced damages at the etched surfaces were investigated as a function of gas-mixing ratios. The maximum etch rate of BLT thin films was 50.8 nm/min of 80% Ar/20% Cl 2 . From various experimental data, amorphous phases on the etched surface existed on both chemically and physically etched films, but the amorphous phase was thicker after the 80% Ar/ 20% Cl 2 process. Moreover, crystalline ''breaking'' appeared during the etching in Cl 2 -containing plasma. Also the remnant polarization and fatigue resistances decreased more for the 80% Ar/20% Cl 2 etch than for pure Ar plasma etch.