## Abstract A circuit theory for metallic single‐electron tunnelling (SET) junctions is presented. In detail circuits with a single SET junction in arbitrary environments are described. Based on the conservation of energy in the circuits—a fundamental circuit theorem—equivalent circuit elements are
On Circuit Theories for Single-Electron Tunneling Devices
✍ Scribed by Hoekstra, Jaap
- Book ID
- 126734508
- Publisher
- Institute of Electrical and Electronics Engineers
- Year
- 2007
- Tongue
- English
- Weight
- 359 KB
- Volume
- 54
- Category
- Article
- ISSN
- 1549-8328
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert
## Abstract In this paper, the impulse circuit model for the single‐electron tunnelling (SET) junction is discussed. Starting from well‐known results of the so‐called orthodox theory of single electronics, an equivalent circuit for the single‐electron tunnelling junction is ‘derived’ by examining t