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On Circuit Theories for Single-Electron Tunneling Devices

✍ Scribed by Hoekstra, Jaap


Book ID
126734508
Publisher
Institute of Electrical and Electronics Engineers
Year
2007
Tongue
English
Weight
359 KB
Volume
54
Category
Article
ISSN
1549-8328

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📜 SIMILAR VOLUMES


Towards a circuit theory for metallic si
✍ J. Hoekstra 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 253 KB

## Abstract A circuit theory for metallic single‐electron tunnelling (SET) junctions is presented. In detail circuits with a single SET junction in arbitrary environments are described. Based on the conservation of energy in the circuits—a fundamental circuit theorem—equivalent circuit elements are

A simulator for single-electron tunnel d
✍ I. Karafyllidis 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 65 KB

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert

On the impulse circuit model for the sin
✍ Jaap Hoekstra 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 192 KB

## Abstract In this paper, the impulse circuit model for the single‐electron tunnelling (SET) junction is discussed. Starting from well‐known results of the so‐called orthodox theory of single electronics, an equivalent circuit for the single‐electron tunnelling junction is ‘derived’ by examining t