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On the impulse circuit model for the single-electron tunnelling junction

✍ Scribed by Jaap Hoekstra

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
192 KB
Volume
32
Category
Article
ISSN
0098-9886

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✦ Synopsis

Abstract

In this paper, the impulse circuit model for the single‐electron tunnelling (SET) junction is discussed. Starting from well‐known results of the so‐called orthodox theory of single electronics, an equivalent circuit for the single‐electron tunnelling junction is ‘derived’ by examining the behaviour of simple circuits including a SET junction. In the impulse circuit model, the electron tunnelling event is basically implemented by an impulsive current source with value eδ(t−t~0~), which absorbs exactly the energy delivered by the sources that is not stored in the circuit. The equivalent circuit consisting of a charged capacitor in parallel with the impulsive current source does not contain a tunnel resistance, and the critical voltage is expressed in only local parameters. The impulse model is suitable for implementation in a circuit simulator; results of a SPICE simulation of the single‐electron pump are shown. Copyright © 2004 John Wiley & Sons, Ltd.

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