Novel direct MOCVD growth of InxGa1−xAs and InP metamorphic layers on GaAs substrates
✍ Scribed by Kao-Feng Yarn; C. I. Liao; C. L. Lin
- Book ID
- 106397438
- Publisher
- Springer US
- Year
- 2006
- Tongue
- English
- Weight
- 954 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0957-4522
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Growth and Electron Microscopical Investigations of (CaBa)Fs Epitaxial Layers on GaAs and InP Substrates (CaBa)Fa layers have been grown on (100)-oriented GaAs and I n P substrates by flash evaporation technique. They were investigated by means of electron microscopical methods (RHEED, TED, TEM). Ep
We investigated the growth of GaAs 1Àx Sb x (x ¼ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM