MBE growth and characterization of GaAs1
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T. Toda; F. Nishino; A. Kato; T. Kambayashi; Y. Jinbo; N. Uchitomi
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Article
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2006
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Elsevier Science
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English
β 217 KB
We investigated the growth of GaAs 1Γx Sb x (x ΒΌ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM