Next generation SiGe BiCMOS technology
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 92 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0961-1290
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📜 SIMILAR VOLUMES
## Abstract In this article, a 60 GHz band down‐conversion mixer for 60 GHz wireless personal‐area network is designed and fabricated on a chip using 0.25 μm SiGe:C BiCMOS process technology. To design this 60 GHz band mixer, architecture of double‐balanced mixer is used, including input and output
## Abstract This article presents two miniature impedance matching Wilkinson power divider circuits in 0.35 μm SiGe BiCMOS technology for on‐chip power combining techniques for WLAN applications. The impedance matching Wilkinson power divider circuits are used as splitter/combiner for a 5.2 GHz ful
## Abstract A fully integrated 52‐GHz millimeter‐wave LC voltage‐controlled oscillator (VCO) with −106 dBc/Hz phase noise at 600‐kHz offset frequency and 0.93‐GHz tuning range is reported in this paper using IBM BiCMOS‐6HP technology. The output voltage swing of the VCO is about 0.4 Vp‐p for the co