๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

SiGe HBT BiCMOS technology for millimeter-wave applications

โœ Scribed by Alvin Joseph; Mattias Dahlstrom; Qizhi Liu; Bradley Orner; Xuefeng Liu; David Sheridan; Robert Rassel; Jim Dunn; David Ahlgren


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
214 KB
Volume
3
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


A 77-GHz PA with ground-plane parasitic
โœ Vittorio Giammello; Egidio Ragonese; Giuseppe Palmisano ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 390 KB

## Abstract This letter presents a 77โ€GHz power amplifier implemented in a SiGe BiCMOS technology featuring bipolar transistors with 160/175โ€GHz __f__~T~/__f__~max~. The circuit adopts a two stage differential topology with integrated input/output matching networks. The amplifier performance is con

Innovative technologies for quasiplanar
โœ Paul Ferrand; Dominique Baillargeat; Serge Verdeyme ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 500 KB

In the context of millimeter filtering, the improvement of circuit electric properties (insertion losses, insulation, and rejection) and the reduction of the manufacturing costs are fundamental stakes. To answer these criteria, we attend since 10 years a constant evolution of the research tasks conc

A micromachined SiGe HBT ultra-wideband
โœ Pen-Li Huang; Yu-Tso Lin; Tao Wang; Yo-Sheng Lin; Shey-Shi Lu ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 254 KB

## Abstract In this article, we demonstrate that the power gain (S~21~) and noise figure (NF) performances of a SiGe HBT Ultraโ€Wideband Lowโ€Noise Amplifier (UWB LNA) can be remarkably improved by removing the silicon underneath the UWB LNA with BiCMOSโ€process compatible backside inductivelyโ€coupled