A 77-GHz PA with ground-plane parasitic cancellation in a SiGe HBT BiCMOS technology
✍ Scribed by Vittorio Giammello; Egidio Ragonese; Giuseppe Palmisano
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 390 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
This letter presents a 77‐GHz power amplifier implemented in a SiGe BiCMOS technology featuring bipolar transistors with 160/175‐GHz f~T~/f~max~. The circuit adopts a two stage differential topology with integrated input/output matching networks. The amplifier performance is considerably improved thanks to proper input/output LC resonant networks, which cancel out the ground‐plane parasitic effect. Matching networks use stacked transformers for impedance matching, differential‐to‐single‐ended conversion, and electro‐static discharge protection. The circuit achieves a power gain of 18.5 dB, a maximum output power of 11.6 dBm, with 4.2% power‐added efficiency, and an output 1‐dB compression point of 9.3 dBm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1413–1416, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25972