✦ LIBER ✦

Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

✍ Scribed by W Winkler; J Borngräber; B Heinemann; H Rücker; R Barth; J Bauer; D Bolze; J Drews; K.-E Ehwald; T Grabolla; U Haak; W Höppner; D Knoll; D Krüger; B Kuck; R Kurps; M Marschmeyer; H Richter; P Schley; D Schmidt; R Scholz; B Tillack; D Wolansky; H.-E Wulf; Y Yamamoto; P Zaumseil

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 282 KB
Volume: 224
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2003.08.058

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Design of 20 GHz high performance L

Design of 20 GHz high performance LC-VCOs in a 52 GHz fT SiGe:C BiCMOS technology

✍ José Cruz Nunez–Perez; Jacques Verdier; Christian Gontrand 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 779 KB

Study of spiral inductors using Cu/low-k

Study of spiral inductors using Cu/low-k interconnect for high-performance radio-frequency integrated circuit (RF-IC) applications

✍ Yo-Sheng Lin; Hum-Ming Hsu 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 212 KB

## Abstract Spiral inductors with various turn numbers fabricated with the use of leading‐edge 0.13‐μm mixed‐signal/RF CMOS technology with 193‐nm lithography and Cu/low‐k interconnect are described in this article. It is shown that quality (Q) factor decreased and increased with increasing tempera