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Impedance matching Wilkinson power dividers in 0.35 μm SiGe BiCMOS technology

✍ Scribed by Ercan Kaymaksut; Yasar Gürbüz; Ibrahim Tekin

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
443 KB
Volume
51
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

This article presents two miniature impedance matching Wilkinson power divider circuits in 0.35 μm SiGe BiCMOS technology for on‐chip power combining techniques for WLAN applications. The impedance matching Wilkinson power divider circuits are used as splitter/combiner for a 5.2 GHz fully integrated class‐A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4 dB, return losses less than −13 dB and port‐to‐port isolation >12 dB at 5.2 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 681–685, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24159

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