𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Wide-band ÷3 injection locked frequency divider in 0.35 μm SiGe BiCMOS

✍ Scribed by Sheng-Lyang Jang; Chun-Wei Hsu; Chia-Wei Chang; Ching-Wen Hsue

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
481 KB
Volume
53
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

A wide‐band ÷3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single‐stage voltage‐controlled oscillator with active‐inductor and HBT diodes, and was fabricated in the 0.35 μm silicon‐germanium 3P3M BiCMOS technology. The ILFD has wide operation range and was performed by injecting a differential signal to the bases of the injection HBTs. At the supply voltage V~DD~ = 1.8 V, the oscillation frequency of the ILFD with two tuning voltages is tunable from 4.17 to 2.12 GHz, and at the incident power of 0 dBm, the ÷3 operation range is 5.93 GHz, from the incident frequency 6.3 to 12.23 GHz. The die area is 0.59 × 0.63 mm^2^. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:609–611, 2011; View this article at wileyonlinelibrary.com. DOI 10.1002/mop.25771

📜 SIMILAR VOLUMES

A dual-band divide-by-2 injection locked
A dual-band divide-by-2 injection locked frequency divider in 0.35-μm SiGe BiCMOS
✍ Sheng-Lyang Jang; Chih-Chieh Shih; Chia-Wei Chang; Cheng-Chen Liu; Jhin-Fang Hua 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 585 KB

## Abstract A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35‐μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross‐coupled HBT LC‐tank oscillator with switched varactor bias for frequency band selection. The LC tank

A parallel-injection injection locked fr
A parallel-injection injection locked frequency divider in 0.35-μm SiGe HBT process
✍ Sheng-Lyang Jang; Chong-Wei Huang; Chia-Wei Chang; Ching-Wen Hsue 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 874 KB

## Abstract A high operation frequency multimodulus injection locked frequency divider (ILFD) has been proposed and it is based on a cross‐coupled voltage‐controlled oscillator with the parallel‐injection heterojunction bipolar transistors (HBTs), and was fabricated in the 0.35 μm silicon‐germanium

A six-phase divide-by-3 injection locked
A six-phase divide-by-3 injection locked frequency divider in SiGe BiCMOS technology
✍ Sheng-Lyang Jang; Kuan-Chun Shen; Chia-Wei Chang; Miin-Horng Juang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 332 KB

## Abstract This article presents a six‐phase silicon‐germanium (SiGe) heterojunction bipolar transistor divide‐by‐3 injection locked frequency divider (ILFD). The ILFD is based on a three‐stage differential ring oscillator (voltage controlled oscillators) and was fabricated in the 0.35 μm SiGe 3P3

A 0.35-μm CMOS divide-by-3 LC injection-
A 0.35-μm CMOS divide-by-3 LC injection-locked frequency divider using linear mixers
✍ Sheng-Lyang Jang; Han-Sheng Chen; Cheng-Chen Liu; Miin-Horng Juang 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 612 KB

## Abstract This letter proposes a divide‐by‐3 frequency divider employing the linear mixer topology; the divider was fabricated in the 0.35‐μm CMOS 2P4M CMOS technology. The divider consists of an nMOS cross‐coupled LC oscillator and two injection MOSFETs in series with the cross‐coupled nMOSFETs.

0.13-μM CMOS Q-band leveled-LO subharmon
0.13-μM CMOS Q-band leveled-LO subharmonic mixer with injection-locked frequency-divider quadrature generator
✍ Jen-Yi Su; Chinchun Meng; Po-Yi Wu; Guo-Wei Huang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 132 KB

## Abstract In this article, a 40‐GHz subharmonic Gilbert down‐conversion mixer with an accurate quadrature local oscillator (LO) input is demonstrated using a standard 0.13‐μm CMOS technology. The quadrature‐output frequency divider is realized by injection‐locked oscillators and is used at the LO

A low-power 63-GHz CMOS direct injection
A low-power 63-GHz CMOS direct injection-locked frequency divider in 0.13-μm CMOS technology
✍ Wei-Lun Hsu; Chang-Zhi Chen; Yo-Sheng Lin 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 564 KB

## Abstract A low‐power 63‐GHz (V‐band) direct injection‐locked frequency‐divider (ILFD) using standard 0.13‐μm CMOS technology is reported. To reduce power consumption and enhance locking range, a PMOS switch directly coupled to the LC tank (output) of the ILFD is used to replace the traditional t