✦ LIBER ✦

A parallel-injection injection locked frequency divider in 0.35-μm SiGe HBT process

✍ Scribed by Sheng-Lyang Jang; Chong-Wei Huang; Chia-Wei Chang; Ching-Wen Hsue

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 874 KB
Volume: 54
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.26593

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✦ Synopsis

Abstract

A high operation frequency multimodulus injection locked frequency divider (ILFD) has been proposed and it is based on a cross‐coupled voltage‐controlled oscillator with the parallel‐injection heterojunction bipolar transistors (HBTs), and was fabricated in the 0.35 μm silicon‐germanium (SiGe) 3P3M BiCMOS technology. The die area is 0.82 × 0.748 mm^2^. The metal‐oxide‐semicondcutor (MOS) varactor is used to tune the frequency range and operation range. The ILFD has wide divide‐by‐3 locking range due to the parallel injection HBTs with an inductive boosted source voltage. When the supply voltage V~CC~ is 1.2 V and the tuning voltage of the free‐running ILFD is tuned from 0 to 1.2 V, the divider's free‐running oscillation frequency is tunable from 6.21 to 7.379 GHz, and at the incident power of 0 dBm the divide‐by‐3 operation range is 2.7 GHz, continuously from the incident frequency 19.2 to 21.9 GHz. The divide‐by‐3 locking range is 0.8 GHz, from the incident frequency 20.9 to 21.7 GHz. The divide‐by‐2 locking range is 0.8 GHz, from the incident frequency 15.2 to 16.0 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:379–383, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26593

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