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A dual-band divide-by-2 injection locked frequency divider in 0.35-μm SiGe BiCMOS

✍ Scribed by Sheng-Lyang Jang; Chih-Chieh Shih; Chia-Wei Chang; Cheng-Chen Liu; Jhin-Fang Huang

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
585 KB
Volume
52
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35‐μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross‐coupled HBT LC‐tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator and it can operate with two tunable frequency bands. Measurement results show that at the supply voltage of 1.25 V, the free‐running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low‐(high‐) frequency band. The divide‐by‐2 operational locking range can be from 6.3 (12.8) to 6.95 (15.3) GHz for the low‐(high‐) frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762–2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586

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