✦ LIBER ✦

A 90 nm CMOS dual-band divide-by-2 and -4 injection-locked frequency divider

✍ Scribed by Sheng-Lyang Jang; Yuan-Kai Wu; Chia-Wei Chang; Jhin-Fang Huang; Cheng-Chen Liu

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 1011 KB
Volume: 52
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.25217

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✦ Synopsis

Abstract

A fourth‐order resonator has been implemented to design a 65 GHz injection‐locked frequency divider (ILFD) implemented in a 90 nm CMOS process.The ILFD is realized with a cross‐coupled nMOS LC‐tank oscillator with an inductor switch for frequency band selection. The LC tank can be a second‐or fourth‐order resonator depending upon the on/off state of a switch across a series‐tuned inductor. Measurement results show that at the supply voltage of 0.5 V, the free‐running frequency is from 8.68 (16.147) to 9.928 (17.89) GHz for the low‐ (high‐) frequency band. The divide‐by‐2 operational locking range is from 14.9 (30.64) to 22.2 (37.74) GHz for the low‐(high)‐frequency band. The divide‐by‐4 operational locking range is from 34.4 (64.6) to 40.35 (67) GHz for the low‐(high)‐frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1421–1425, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25217

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