## Abstract In this study, a multimodulus CMOS injection‐locked frequency divider (ILFD) fabricated in a 0.18‐μm CMOS process is designed and the operation principle of the ILFD is described, which was realized using a cross‐coupled PMOS LC‐tank oscillator as the load of a double‐balanced NMOS Gilb
A CMOS LC injection-locked frequency divider with the division ratio of 2 and 3
✍ Scribed by Sheng-Lyang Jang; Chien-Feng Lee; Jhong-Chen Luo
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 421 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This article proposes a new CMOS LC‐tank injection locked frequency divider (ILFD) fabricated in a 0.18‐μm CMOS process and describes the operation principle of the ILFD. The ILFD circuit is realized with a double cross‐coupled CMOS LC‐tank oscillator with a symmetric MOS‐switched LC resonator. The ILFD can be used as a first‐harmonic injection‐locked oscillator, divide‐by‐2 and divide‐by‐3 frequency divider depending upon the frequency of the injection signal. Measurement results show that at the supply voltage of 1.8 V, the free‐running frequency is from 5.12 to 5.64 GHz. The core current and power consumption of the divider are 2.76 mA and 4.97 mW, respectively. At the incident power of 0 dBm, the locking range is from the incident frequency 9.48 to 11.48 GHz (15.04 to 17.12 GHz) in the divide‐by‐2(3) mode. © 2009 Wiley Pe riodicals, Inc. Microwave Opt Technol Lett 51: 1263–1267, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24312
📜 SIMILAR VOLUMES
## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp
## Abstract An LC divide‐by‐2/3 injection‐locked frequency divider (ILFD) is described, where a pair of switched capacitors is used to select the division ratio between 2 and 3. The locking range analysis of the ILFD based on the gain and phase conditions is discussed. Based on the analysis, the op
## Abstract This letter proposes a divide‐by‐3 frequency divider employing the linear mixer topology; the divider was fabricated in the 0.35‐μm CMOS 2P4M CMOS technology. The divider consists of an nMOS cross‐coupled LC oscillator and two injection MOSFETs in series with the cross‐coupled nMOSFETs.
## Abstract A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load imped
## Abstract This letter proposes a new divide‐by‐3 injection‐locked frequency divider (ILFD) fabricated in the 0.35‐μm CMOS 2P4M CMOS technology. The divider consists of a pMOS cross‐coupled LC oscillator, two injection MOSFETs, and a transformer staggered in between the cross‐coupled pMOSFETs and