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A 2 mW, 55.8-GHz CMOS injection-locked frequency divider with 7.1-GHz locking range

✍ Scribed by Wei-Lun Hsu; Chang-Zhi Chen; Yo-Sheng Lin


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
260 KB
Volume
51
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition, the inductors and capacitors of the LC‐tank were implemented by low‐Q micro‐stripline inductors and high‐Q varactors, respectively, to further improve the locking range of the ILFD. The result shows that a wide‐locking‐range of 7.1 GHz (from 48.7 GHz to 55.8 GHz, 13.6%) was achieved. The power consumption of the ILFD is only 2 mW from a 1.1 V power supply. The chip area was only 0.66 × 0.48 mm^2^ excluding the test pads. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 702–706, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24148


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