## Abstract A 20–30 GHz divide‐by‐3 ring‐based injection locked frequency divider (ILFD) using NMOS loads for a wide locking range has been developed in a commercial 0.13‐μm Si RFCMOS technology.The ILFD shows a locking range up to 7.5 GHz (20.8−28.3 GHz, 30.5%) and operation range of 10 GHz (20.8–
A 2 mW, 55.8-GHz CMOS injection-locked frequency divider with 7.1-GHz locking range
✍ Scribed by Wei-Lun Hsu; Chang-Zhi Chen; Yo-Sheng Lin
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 260 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition, the inductors and capacitors of the LC‐tank were implemented by low‐Q micro‐stripline inductors and high‐Q varactors, respectively, to further improve the locking range of the ILFD. The result shows that a wide‐locking‐range of 7.1 GHz (from 48.7 GHz to 55.8 GHz, 13.6%) was achieved. The power consumption of the ILFD is only 2 mW from a 1.1 V power supply. The chip area was only 0.66 × 0.48 mm^2^ excluding the test pads. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 702–706, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24148
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## Abstract A 53–67 GHz wide locking range injection‐locked frequency divider (ILFD) has been designed and fabricated using 0.13‐μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption