## Abstract This letter presents a new low power and wide‐locking range divide‐by‐2 injection‐locked frequency divider (ILFD). The ILFD consists of a new 5.35 GHz quadrature voltage controlled oscillator (QVCO) and two NMOS switches, which are in parallel with the QVCO resonators for signal injecti
A 53–67 GHz low power and wide locking range injection-locked frequency divider with forward body bias
✍ Scribed by Jeng-Han Tsai; Yu-Hang Wong
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 325 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 53–67 GHz wide locking range injection‐locked frequency divider (ILFD) has been designed and fabricated using 0.13‐μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption. Via a 0 dBm incident signal power, an input locking rage greater than 14 GHz (>23%) is achieved with 4 mW from supply voltage of 0.8 V. If the supply voltage further reduces to 0.6 V, the input locking rage is 6 GHz (10%) while consuming only 1.2 mW. Compared to previous reported works in high‐speed CMOS FD, the presented ILFD achieves superior figure of merit (FOM). Without extra voltage control mechanisms to increase the locking range, this FD covers whole 57–64 GHz band is suitable for integration into a 60 GHz WPAN phase‐locked loop system. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1386–1389, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25989
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## Abstract A 58‐GHz (V‐band) CMOS direct injection‐locked frequency‐divider (DILFD) using input‐power‐matching technique for locking‐range enhancement is reported for the first time. In an input‐power‐matching technique, an inductive input‐matching‐network is added to the gate of the NMOS switch t
## Abstract A 20–30 GHz divide‐by‐3 ring‐based injection locked frequency divider (ILFD) using NMOS loads for a wide locking range has been developed in a commercial 0.13‐μm Si RFCMOS technology.The ILFD shows a locking range up to 7.5 GHz (20.8−28.3 GHz, 30.5%) and operation range of 10 GHz (20.8–
## Abstract A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load imped