## Abstract This article proposes a divide‐by‐3 frequency divider (FD) with quadrature outputs fabricated in the 0.18‐μm CMOS technology. The current reuse and the back‐gate coupling techniques are adopted. Measured results show that the free‐running frequency is from 1.173 to 1.25 GHz. The propose
A 20–30 GHz divide-by-3 ring-oscillator-based injection locked frequency divider with a wide locking range
✍ Scribed by Seungwoo Seo; Hyogi Seo; Sanggeun Jeon; Jae-Sung Rieh
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 414 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 20–30 GHz divide‐by‐3 ring‐based injection locked frequency divider (ILFD) using NMOS loads for a wide locking range has been developed in a commercial 0.13‐μm Si RFCMOS technology.The ILFD shows a locking range up to 7.5 GHz (20.8−28.3 GHz, 30.5%) and operation range of 10 GHz (20.8–30.8 GHz, 38.8%) with DC power consumption of 13 mW and a 1.5 V supply voltage. The fabricated circuit occupies only 0.008 mm^2^ core area. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:389–841, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25883
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## Abstract A 53–67 GHz wide locking range injection‐locked frequency divider (ILFD) has been designed and fabricated using 0.13‐μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption
## Abstract A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load imped