## Abstract This article presents a wide locking‐range divide‐by‐3 injection‐locked frequency divider (ILFD) employing tunable active inductors (TAIs), which are used to extend the locking range and to reduce die area. The CMOS ILFD is based on a voltage‐controlled oscillator (VCO) with cross‐coupl
A 3.51-to-3.8 GHz divide-by-3 injection-locked frequency divider
✍ Scribed by Yen-Chung Chiang; Ming-Fong Wu
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 496 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
This article proposes a divide‐by‐3 frequency divider (FD) with quadrature outputs fabricated in the 0.18‐μm CMOS technology. The current reuse and the back‐gate coupling techniques are adopted. Measured results show that the free‐running frequency is from 1.173 to 1.25 GHz. The proposed FD can cover the input frequency from 3.51 to 3.8 GHz at the incident power of −3 dBm. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 490–493, 2010; Published online in Wiley InterScience (www.interscience. wiley.com). DOI 10.1002/mop.24920
📜 SIMILAR VOLUMES
## Abstract A 20–30 GHz divide‐by‐3 ring‐based injection locked frequency divider (ILFD) using NMOS loads for a wide locking range has been developed in a commercial 0.13‐μm Si RFCMOS technology.The ILFD shows a locking range up to 7.5 GHz (20.8−28.3 GHz, 30.5%) and operation range of 10 GHz (20.8–
## Abstract An LC divide‐by‐2/3 injection‐locked frequency divider (ILFD) is described, where a pair of switched capacitors is used to select the division ratio between 2 and 3. The locking range analysis of the ILFD based on the gain and phase conditions is discussed. Based on the analysis, the op
## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp
## Abstract This article presents a six‐phase silicon‐germanium (SiGe) heterojunction bipolar transistor divide‐by‐3 injection locked frequency divider (ILFD). The ILFD is based on a three‐stage differential ring oscillator (voltage controlled oscillators) and was fabricated in the 0.35 μm SiGe 3P3
## Abstract A low‐power and wide‐locking‐range 55.8‐GHz (V‐band) injection‐locked frequency‐divider (ILFD) using standard 0.13 μm CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross‐coupled pair to maximize the equivalent load imped