## Abstract A 53–67 GHz wide locking range injection‐locked frequency divider (ILFD) has been designed and fabricated using 0.13‐μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption
A 58-GHz wide-locking range CMOS direct injection-locked frequency divider using input-power-matching technique
✍ Scribed by Chang-Zhi Chen; Wei-Lun Hsu; Yo-Sheng Lin
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 734 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 58‐GHz (V‐band) CMOS direct injection‐locked frequency‐divider (DILFD) using input‐power‐matching technique for locking‐range enhancement is reported for the first time. In an input‐power‐matching technique, an inductive input‐matching‐network is added to the gate of the NMOS switch to optimize the input‐power‐matching, i.e. to maximize the internal power, over the frequency band of interest. This DILFD architecture also features a very low input capacitance; therefore, high operating frequency of 58.2 GHz can be achieved. The DILFD dissipated 8.45 mW power from a 1.3 V power supply, and achieved a total locking range of 9.3 GHz (48.9–58.2 GHz; 17.4%), which is 400% higher than that (1.86 GHz (3%)) of a traditional DILFD without the input‐matching‐network for comparison. The chip area was only 0.585 × 0.492 mm^2^ excluding the test pads. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 685–689, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24158
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## Abstract A low‐power 63‐GHz (V‐band) direct injection‐locked frequency‐divider (ILFD) using standard 0.13‐μm CMOS technology is reported. To reduce power consumption and enhance locking range, a PMOS switch directly coupled to the LC tank (output) of the ILFD is used to replace the traditional t