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A low-power 63-GHz CMOS direct injection-locked frequency divider in 0.13-μm CMOS technology

✍ Scribed by Wei-Lun Hsu; Chang-Zhi Chen; Yo-Sheng Lin

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
564 KB
Volume
50
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A low‐power 63‐GHz (V‐band) direct injection‐locked frequency‐divider (ILFD) using standard 0.13‐μm CMOS technology is reported. To reduce power consumption and enhance locking range, a PMOS switch directly coupled to the LC tank (output) of the ILFD is used to replace the traditional tail transistor for injection path. This ILFD architecture also features a very low input capacitance; thus, high operating frequency of 63 GHz can be achieved. This direct ILFD consumes 5.79 mW with locking range of 1.86 GHz (61.24–63.1 GHz). The chip area was only 0.585 × 0.38 mm^2^ excluding the test pads. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2581–2584, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23768

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