## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp
A 0.35-μm CMOS divide-by-3 LC injection-locked frequency divider using linear mixers
✍ Scribed by Sheng-Lyang Jang; Han-Sheng Chen; Cheng-Chen Liu; Miin-Horng Juang
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 612 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This letter proposes a divide‐by‐3 frequency divider employing the linear mixer topology; the divider was fabricated in the 0.35‐μm CMOS 2P4M CMOS technology. The divider consists of an nMOS cross‐coupled LC oscillator and two injection MOSFETs in series with the cross‐coupled nMOSFETs. At the drain bias voltage of 1.2 V, the divider free‐running frequency is tunable from 3.73 to 3.92 GHz, and at the incident power of 0 dBm, the operational locking range is about 0.69 GHz, from the incident frequency 10.99 to 11.68 GHz. The core power consumption is 6.9 mW. The die area is 0.83 × 0.94 mm^2^. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2740–2743, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25597
📜 SIMILAR VOLUMES
## Abstract A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35‐μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross‐coupled HBT LC‐tank oscillator with switched varactor bias for frequency band selection. The LC tank
## Abstract This letter proposes a CMOS injection‐locked frequency divider (ILFD) fabricated in a 0.35‐μm CMOS process.The ILFD circuit is realized with a cross‐coupled CMOS LC‐tank oscillator, and the external injection is carried out through the gate of a waffle MOSFET. The self‐oscillating ILFD
## Abstract A high operation frequency multimodulus injection locked frequency divider (ILFD) has been proposed and it is based on a cross‐coupled voltage‐controlled oscillator with the parallel‐injection heterojunction bipolar transistors (HBTs), and was fabricated in the 0.35 μm silicon‐germanium
## Abstract In this article, a 40‐GHz subharmonic Gilbert down‐conversion mixer with an accurate quadrature local oscillator (LO) input is demonstrated using a standard 0.13‐μm CMOS technology. The quadrature‐output frequency divider is realized by injection‐locked oscillators and is used at the LO
## Abstract A wide‐band ÷3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single‐stage voltage‐controlled oscillator with active‐inductor and HBT diodes, and was fabricated in the 0.35 μm silicon‐germanium 3P3M BiCMOS technology. The ILFD has wide operation range