## Abstract This letter proposes a divide‐by‐3 frequency divider employing inductor‐over MOS topology to reduce the chip area and chip cost; the divider was fabricated using the 0.35‐μm 2P4M CMOS technology. The divider consists of an nMOS cross‐coupled LC oscillator and two injection MOSFETs in se
Divide-by-3 LC injection locked frequency divider with a transformer as an injector's load
✍ Scribed by Sheng-Lyang Jang; Pei-Xi Lu; C. F. Lee; M.-H. Juang
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 503 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
This letter proposes a new divide‐by‐3 injection‐locked frequency divider (ILFD) fabricated in the 0.35‐μm CMOS 2P4M CMOS technology. The divider consists of a pMOS cross‐coupled LC oscillator, two injection MOSFETs, and a transformer staggered in between the cross‐coupled pMOSFETs and injection FETs, and the LC resonator is composed of two inductors and varactors. The injection FET uses the transformer load to increase the locking range. At the supply voltage of 2 V, the divider free‐running frequency is tunable from 2.433 to 2.79 GHz, and at the incident power of 0 dBm the locking range is about 1.13 GHz (14.9%), from the incident frequency 7.17–8.3 GHz. The core power consumption is 8.64 mW. The die area is 1.36 × 0.8 mm^2^. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2722–2725, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23775
📜 SIMILAR VOLUMES
## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp
## Abstract An LC divide‐by‐2/3 injection‐locked frequency divider (ILFD) is described, where a pair of switched capacitors is used to select the division ratio between 2 and 3. The locking range analysis of the ILFD based on the gain and phase conditions is discussed. Based on the analysis, the op
## Abstract This letter proposes a divide‐by‐3 frequency divider employing the linear mixer topology; the divider was fabricated in the 0.35‐μm CMOS 2P4M CMOS technology. The divider consists of an nMOS cross‐coupled LC oscillator and two injection MOSFETs in series with the cross‐coupled nMOSFETs.
## Abstract A 20–30 GHz divide‐by‐3 ring‐based injection locked frequency divider (ILFD) using NMOS loads for a wide locking range has been developed in a commercial 0.13‐μm Si RFCMOS technology.The ILFD shows a locking range up to 7.5 GHz (20.8−28.3 GHz, 30.5%) and operation range of 10 GHz (20.8–
## Abstract This article proposes a new CMOS LC‐tank injection locked frequency divider (ILFD) fabricated in a 0.18‐μm CMOS process and describes the operation principle of the ILFD. The ILFD circuit is realized with a double cross‐coupled CMOS LC‐tank oscillator with a symmetric MOS‐switched LC re