## Abstract This article presents a wide locking‐range divide‐by‐3 injection‐locked frequency divider (ILFD) employing tunable active inductors (TAIs), which are used to extend the locking range and to reduce die area. The CMOS ILFD is based on a voltage‐controlled oscillator (VCO) with cross‐coupl
Divide-by-3 LC injection-locked frequency divider with inductor over MOS topology
✍ Scribed by Sheng-Lyang Jang; Wei-Chi Chen; Chien-Feng Lee
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 552 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This letter proposes a divide‐by‐3 frequency divider employing inductor‐over MOS topology to reduce the chip area and chip cost; the divider was fabricated using the 0.35‐μm 2P4M CMOS technology. The divider consists of an nMOS cross‐coupled LC oscillator and two injection MOSFETs in series with the cross‐coupled NMOSFETs, and the LC resonator is composed of two inductors and varactors. At the supply voltage of 1.6 V, the divider free‐running frequency is tunable from 2.17 to 2.43 GHz, and at the incident power of 0 dBm the locking range is about 1.03 GHz (14.9%), from the incident frequency 6.41 to 7.44 GHz. The core power consumption is 15.1 mW. The die area is 0.753 × 0.786 mm^2^. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 988–992, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23279
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