✦ LIBER ✦

Design tradeoff for SiGe 0.35-μm BiCMOS low-power and high figure-of-merit LNA

✍ Scribed by Hsien-Ku Chen; Hsien-Jui Chen; Ying-Zong Juang; Chin-Fong Chiu

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 239 KB
Volume: 47
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.21083

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✦ Synopsis

Abstract

A 5.4‐mW ultra‐low dc power low‐noise amplifier (LNA) at 5.5 GHz, based on 0.35‐μm BiCMOS technology, is presented. The trade‐off between the NF and linearity for LNA circuit design has been investigated. Furthermore, the use of the HBT‐cascade‐MOS methodology simultaneously satisfies the trade‐off between the noise figure (NF) and linearity of the LNA. This amplifier achieves a gain/NF × P~DC~ ratio figure of merit of 0.774 (1/mW), which is the best reported at the 5–6‐GHz band, and is suitable for wireless LAN applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 65–68, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21083

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