## Abstract A 5‐GHz CMOS VCO with improved phase noise is proposed in this article. A gate voltage boosting technique is realized with only one inductor. The proposed VCO is fabricated in 0.18 μm CMOS process, and the measured phase noise is −122.7 dBc/Hz@1 MHz when operates at 4.936 GHz, with a po
A 52 GHz VCO with low-phase noise implemented in SiGe BiCMOS technology
✍ Scribed by Lin Jia; Jian-Guo Ma; Alper Cabuk; Kiat Seng Yeo; Manh Anh Do
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 150 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A fully integrated 52‐GHz millimeter‐wave LC voltage‐controlled oscillator (VCO) with −106 dBc/Hz phase noise at 600‐kHz offset frequency and 0.93‐GHz tuning range is reported in this paper using IBM BiCMOS‐6HP technology. The output voltage swing of the VCO is about 0.4 Vp‐p for the complementary cross‐coupled topology with a buffer. A bipolar device is used as the tail transistor to constantly supply a current in order to preserve the oscillation of the VCO. The parasitics due to the interconnected metals are extracted from the layout, and the effects of those parasitics on the VCO's performance are investigated. Based on these analyses, an optimized layout of the complementary VCO is obtained, and the pre‐layout and post‐layout simulations are compared and presented. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 414–418, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11235
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