Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT de¨ices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been de¨eloped. The extraction procedure has been successfully checked on HEMT de¨ices in GaAs and InP techn
New small-signal model for HEMTs and MESFETs
✍ Scribed by Jian-Guo Ma; Ting Huang Lee; Kiat Seng Yeo; Manh Anh Do
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 152 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0895-2477
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