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A novel bias-dependent rational model for MESFET and HEMT devices

✍ Scribed by Francesco Centurelli; Stefano Pisa; Pasquale Tommasino; Alessandro Trifiletti

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
154 KB
Volume
24
Category
Article
ISSN
0895-2477

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✦ Synopsis

The obtained numerical results show that the quasisquare excited on a point situated on its diagonal is an efficient technique for obtaining a broader bandwidth structure radiating circular polarized waves. Furthermore, the obtained structure can be used to operate as a dual-frequency structure, provided that the difference between the lengths of the quasisquare structure is greater than the dielectric substrate thickness.

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