A complete extraction procedure able to determine MES-FET and HEMT nonlinear model parameters starting from standard dc and S-parameter measured data is presented. The procedure has been checked on different P-HEMTs, and aยจerage errors lower than 10% haยจe been found for the static output characteris
A new procedure for the extraction of a multibias linear model for MESFETs and HEMTs
โ Scribed by Alberto Di Martino; Eric Dutisseuil; Carine Ladner; Stefano Pisa; Pasquale Tommasino; Alessandro Trifiletti
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 99 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0895-2477
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โฆ Synopsis
Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT deยจices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been deยจeloped. The extraction procedure has been successfully checked on HEMT deยจices in GaAs and InP technologies up to 50 GHz. แฎ 2000
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