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A new procedure for the extraction of a multibias linear model for MESFETs and HEMTs

โœ Scribed by Alberto Di Martino; Eric Dutisseuil; Carine Ladner; Stefano Pisa; Pasquale Tommasino; Alessandro Trifiletti


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
99 KB
Volume
25
Category
Article
ISSN
0895-2477

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โœฆ Synopsis


Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT deยจices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been deยจeloped. The extraction procedure has been successfully checked on HEMT deยจices in GaAs and InP technologies up to 50 GHz. แฎŠ 2000


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