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New optical capacitance model for GaAs MESFETs

✍ Scribed by C. Navarro; J. M. Zamanillo; A. Mediavilla; A. Tazón; J. L. García

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
328 KB
Volume
26
Category
Article
ISSN
0895-2477

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✦ Synopsis

New empirical equations for simulating the optical and bias dependencies of the junction capacitances of the GaAs MESFET are presented in this paper. New linear and quasilogarithmic ¨ariations ( ) ¨ersus the incident optical power PL for gate-to-drain and gate-to-source ( ) capacitances C and C , respecti¨ely, ha¨e been found. Experimental g d g s

results show excellent agreement with the simulated ¨alues o¨er a wide range of optical powers and bias conditions.

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