New empirical equations for simulating the optical and bias dependencies of the junction capacitances of the GaAs MESFET are presented in this paper. New linear and quasilogarithmic Β¨ariations ( ) Β¨ersus the incident optical power PL for gate-to-drain and gate-to-source ( ) capacitances C and C , re
An improved Chalmers model for a GaAs MESFET
β Scribed by Q. Xiao; B. L. Ooi; J. Ma
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 257 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0895-2477
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β¦ Synopsis
most advantageous without RIN and the w s 2 case with RIN at P s y60 dB. s 4. CONCLUSION
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. In this paper, the effects of the relative intensity noise RIN of the laser output are analyzed in two-, three-, four-, and six-wavelength chip-synchronized optical orthogonal codedivision multiple-access systems with Gaussian approximation analysis, assuming a multiwavelength erbium-doped fiber laser source, a graded-index multimode fiber, and a directdetection receiver. The analysis shows that, in a multiwavelength optical orthogonal CDMA system, the presence of RIN plays a significant role in addition to the received laser power, number of simultaneous users, and modal parameter. REFERENCES 1. L. Tancevski and I. Andonovic, Wavelength hoppingrtime spread-Ε½ .
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A numerical model of the trans¨erse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the dri¨ing source, and includes more accurate ¨alues of the MESFET parameters. The model has been used to study the dependence of these delays
7 Range profile with software correction
It can be shown that these two special cases of the gyrotropic medium actually correspond to affine-uniaxial media as defined above. In fact, corresponding to the two conditions (24) we can write, respectively, (26) 2.5. Dielectric Special Case. As an example, let us consider the case when there is
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