A numerical model of the trans¨erse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the dri¨ing source, and includes more accurate ¨alues of the MESFET parameters. The model has been used to study the dependence of these delays
β¦ LIBER β¦
Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures
β Scribed by Agostino Giorgio; Anna Gina Perri
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 224 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0894-3370
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