First, using a model of the trans¨erse propagation delays in a GaAs MESFET, a method for calculating the delays in the cascaded GaAs MESFET-based DCFL in¨erters is presented. The algorithm has been used to study the dependence of the delays on the ¨arious MESFET and in¨erter design parameters. Next,
Modeling of transverse propagation delays in a GaAs MESFET
✍ Scribed by A. K. Goel; V. T. Mohun
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 172 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
A numerical model of the trans¨erse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the dri¨ing source, and includes more accurate ¨alues of the MESFET parameters. The model has been used to study the dependence of these delays on the ¨arious MESFET design parameters. The results can be utilized for the optimization of the MESFET parameters for minimum propagation delays.
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An explicit closed-form solution for the nonlinear wa¨e equation in nonlinear GaAs-AlAs MQW structures is obtained with the use of a perturbation technique. Incidence of a plane wa¨e onto a nonlinear medium is studied. As expected, the reflection coefficient is found to be strongly dependent on the
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