A numerical model of the trans¨erse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the dri¨ing source, and includes more accurate ¨alues of the MESFET parameters. The model has been used to study the dependence of these delays
Propagation delays in GaAs MESFETs—model validation
✍ Scribed by A. K. Goel; V. T. Mohun; D. J. Peacock
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 124 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
First, using a model of the trans¨erse propagation delays in a GaAs MESFET, a method for calculating the delays in the cascaded GaAs MESFET-based DCFL in¨erters is presented. The algorithm has been used to study the dependence of the delays on the ¨arious MESFET and in¨erter design parameters. Next, an attempt has been made to ¨alidate the model by comparing the modeling results with those obtained by actual experimental measurements on se¨eral custom-designed in-¨erter chains. Good agreement was obser¨ed between the expected and the experimental ¨alues.
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