New empirical equations for simulating the optical and bias dependencies of the junction capacitances of the GaAs MESFET are presented in this paper. New linear and quasilogarithmic ¨ariations ( ) ¨ersus the incident optical power PL for gate-to-drain and gate-to-source ( ) capacitances C and C , re
Energy model for optically controlled MESFETs
✍ Scribed by M. A. Alsunaidi
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 133 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
An energy-based transport model for the analysis of illuminated microwa¨e acti¨e de¨ices is presented. The model is based on the Boltzmann's transport equation, with optical carrier generation and carrier recombination accounted for. The simulation results are compared with the con¨entional local-field mobility models based on driftdiffusion formulations. It is shown that the drift-diffusion models lose their applicability in submicrometer gate-length de¨ices. The presented time-domain model has a great potential in the analysis of microwa¨e de¨ices under ac and pulsed illumination conditions.
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