Nano-crystalline silicon thin films grown by the inductively coupled plasma assisted CFUBM at low temperature

✍ Scribed by Kyung S. Shin; Yoon S. Choi; In S. Choi; Y. Setsuhara; Jeon G. Han

• Book ID: 104094868
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 497 KB
• Volume: 205
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2010.07.086

✦ Synopsis

The hydrogenated nano-crystalline silicon thin films were deposited on glass substrates at low temperatures in an argon and hydrogen atmosphere using inductively coupled plasma (ICP)assisted closed field unbalanced magnetron sputtering (CFUBM) system. A one-turn ICP coil was installed to dissociate the hydrogen molecules by the induced magnetic field inside the chamber. The emission intensity, I Hα (656.28 nm), was saturated at a magnetron RF (13.56 MHz) power of 400 W and increased with increasing ICP RF (13.56 MHz) power. The Raman peak of the silicon thin film shifted from 480 cm -1 (amorphous phase) to 520 cm -1 (crystalline phase) with increasing ICP power. The crystalline volume fraction of the silicon thin films was 65% at an ICP power of 400 W and the crystallite grain size was approximately 7 nm. Xray diffraction and Fourier-transform infrared spectroscopy were used to examine the structural changes and chemical bonding state, respectively.