Effects of growth variables on the properties of single crystalline ZnO thin film grown by inductively coupled plasma metal organic chemical vapor deposition
β Scribed by Ju-Hoon Park; Chang-Bae Lee; Il-Soo Kim; Seong-Joo Jang; Byung-Teak Lee
- Book ID
- 108290351
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 913 KB
- Volume
- 517
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The
N-doped p-type ZnO films were grown by plasma-free metal-organic chemical vapor deposition (MOCVD). The effect of substrate temperature on the electrical, optical, and structural properties of the N-doped ZnO films was investigated by Hall-effect, photoluminescence, X-ray diffraction measurements. T