𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition

✍ Scribed by Jingchang Sun; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Ziwen Zhao; Heqiu Zhang; Yingmin Luo; Lizhong Hu; Guotong Du

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
575 KB
Volume
254
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

✦ Synopsis

2. Experimental procedures

ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The

πŸ“œ SIMILAR VOLUMES

Temperature effect on the electrical, st
Temperature effect on the electrical, structural and optical properties of N-doped ZnO films by plasma-free metal organic chemical vapor deposition
✍ Ying Zhu; Shisheng Lin; Yinzhu Zhang; Zhizhen Ye; Yangfan Lu; Jianguo Lu; Binghu πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 530 KB

N-doped p-type ZnO films were grown by plasma-free metal-organic chemical vapor deposition (MOCVD). The effect of substrate temperature on the electrical, optical, and structural properties of the N-doped ZnO films was investigated by Hall-effect, photoluminescence, X-ray diffraction measurements. T