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Temperature effect on the electrical, structural and optical properties of N-doped ZnO films by plasma-free metal organic chemical vapor deposition

โœ Scribed by Ying Zhu; Shisheng Lin; Yinzhu Zhang; Zhizhen Ye; Yangfan Lu; Jianguo Lu; Binghui Zhao

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
530 KB
Volume
255
Category
Article
ISSN
0169-4332

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โœฆ Synopsis

N-doped p-type ZnO films were grown by plasma-free metal-organic chemical vapor deposition (MOCVD). The effect of substrate temperature on the electrical, optical, and structural properties of the N-doped ZnO films was investigated by Hall-effect, photoluminescence, X-ray diffraction measurements. The electrical properties of the films were extremely sensitive to the substrate temperature and the conduction type could be reversed in a narrow range from 380 8C to 420 8C. Based on X-ray photoelectron spectroscopy, a high compensation effect in the N-doped ZnO films grown by plasma-free MOCVD was suggested to explain the temperature-dependent phenomenon.

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โœ Jingchang Sun; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Ziwen Zhao; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 575 KB

## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The