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Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method

โœ Scribed by Hyoun Woo Kim; Nam Ho Kim


Book ID
108215042
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
369 KB
Volume
110
Category
Article
ISSN
0921-5107

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## Abstract We have deposited indium oxide (In~2~O~3~) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200โ€“300 ยฐC. The films had a preferred orie