Growth of In2O3thin films on silicon by the metalorganic chemical vapor deposition method

✍ Scribed by Kim, Nam Ho ;Myung, Ju Hyun ;Kim, Hyoun Woo ;Lee, Chongmu

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 167 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200406916

✦ Synopsis

Abstract

We have deposited indium oxide (In~2~O~3~) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200–300 °C. The films had a preferred orientation along [111] direction, with the X‐ray diffraction (XRD) full width at half‐maximum (FWHM) of less than 0.4°.